Detailed Information
Cited 0 time in 
Cited 2 time in 
Cited 2 time in
Metadata Downloads
Influence of Si-In-Zn-O/Ag/Si-In-Zn-O Electrode on Amorphous Si-Zn-Sn-O Thin Film Transistors
- Authors
- Hwang, Jin Young; Lee, Sang Yeol
- Issue Date
- Feb-2021
- Publisher
- Korean Institute of Electrical and Electronic Material Engineers
- Keywords
- Amorphous oxide semiconductor; Oxide/Metal/Oxide; Thin film transistor; Transparent
- Citation
- Transactions on Electrical and Electronic Materials, v.22, no.1, pp.103 - 107
- Journal Title
- Transactions on Electrical and Electronic Materials
- Volume
- 22
- Number
- 1
- Start Page
- 103
- End Page
- 107
- ISSN
- 1229-7607
- Abstract
- Amorphous SiZnSnO (a-SZTO) thin film transistors (TFTs) have been reported with transparent Si–In–Zn–O/Ag/Si–In–Zn–O (SIZO OMO) source/drain (S/D) electrodes. The characteristics of ITO and SIZO OMO electrodes were compared with conventional metal electrode of Ti/Al. The SZTO TFT with SIZO OMO electrode showed high field effect mobility of 17.69 cm2/Vs, threshold voltage of 4.05 V and low sub-threshold swing of 0.33 V/decade. The stability of a-SZTO TFTs with SIZO OMO electrode was measured ∆VTH = 1.4 V at 333 K, and − 20 V for 7200 s under negative bias temperature stress (NBTS). © 2021, The Author(s).
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - IT융합대학 > 전자공학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.