Ambipolar and anti-ambipolar thin-film transistors from edge-on small-molecule heterostructures
- Authors
- On, Sungmin; Kim, Young-Joon; Lee, Han-Koo; Yoo, Hocheon
- Issue Date
- Mar-2021
- Publisher
- ELSEVIER
- Keywords
- Ambipolar; Anti-ambipolar; Heterostructure; Organic semiconductors; Thin-film transistors
- Citation
- Applied Surface Science, v.542
- Journal Title
- Applied Surface Science
- Volume
- 542
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/79965
- DOI
- 10.1016/j.apsusc.2020.148616
- ISSN
- 0169-4332
- Abstract
- Heterostructure electronic devices potentially provide opportunities for novel transistor operations, including ambipolar and anti-ambipolar switching characteristics. However, there are still no previous studies investigating the physical, chemical, and morphological properties of small-molecule semiconductor films deposited as heterojunctions. Here, we systemically investigate chemical and morphological structure in a heterostructure of small-molecule organic semiconductors using X-ray photoelectron spectroscopy (XPS), near-edge X-ray absorption of fine structure (NEXAFS), and ultraviolet photoelectron spectroscopy (UPS). The analysis reveals that dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) and N,N′-ditridecylperylenediimide (PTCDI-C13) maintain their chemical compositions, energy structure, and edge-on molecular orientations (tilt angle = 66°). Furthermore, ambipolar and anti-ambipolar transistors are demonstrated using the edge-on DNTT/PTCDI-C13 heterostructure. These transistors enable CMOS-like inverter and ternary inverter operations as respective example applications of ambipolar and anti-ambipolar transistors. © 2020 Elsevier B.V.
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