High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics
- Authors
- Hong, Young Ki; Yoo, Geonwook; Kwon, Junyeon; Hong, Seongin; Song, Won Geun; Liu, Na; Omkaram, Inturu; Yoo, Byungwook; Ju, Sanghyun; Kim, Sunkook; Oh, Min Suk
- Issue Date
- May-2016
- Publisher
- AMER INST PHYSICS
- Citation
- AIP ADVANCES, v.6, no.5
- Journal Title
- AIP ADVANCES
- Volume
- 6
- Number
- 5
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/83685
- DOI
- 10.1063/1.4953062
- ISSN
- 2158-3226
- Abstract
- Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS2) thin-film transistor (TFT), which are still in much debate and controversy. As one of promising breakthrough for transparent electronics with a high device performance, we have realized MoS2 TFTs with source/drain electrodes consisting of transparent bi-layers of a conducting oxide over a thin film of low work function metal. Intercalation of a low work function metal layer, such as aluminum, between MoS2 and transparent source/drain electrodes makes it possible to optimize the Schottky contact characteristics, resulting in about 24-fold and 3 orders of magnitude enhancement of the field-effect mobility and on-off current ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength range. (C) 2016 Author(s).
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