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Optimization of Feedback FET with Asymmetric Source Drain Doping Profile
- Issue Date
- Apr-2022
- Publisher
- MDPI
- Keywords
- feedback field-effect transistor (FBFET); device optimization; on-off current ratio; subthreshold swing; TCAD
- Citation
- Micromachines, v.13, no.4
- Journal Title
- Micromachines
- Volume
- 13
- Number
- 4
- ISSN
- 2072-666X
- Abstract
- A feedback field-effect transistor (FBFET) is a novel device that uses a positive feedback mechanism. FBFET has a high on-/off ratio and is expected to realize ideal switching characteristics through steep changes from off-state to on-state. In this paper, we propose and optimize FBFET devices with asymmetric source/drain doping concentrations. Additionally, we discuss the changes in electrical characteristics across various channel length and channel thickness conditions and compare them with those of FBFET with a symmetric source/drain. This shows that FBFET with an asymmetric source/drain has a higher on-/off ratio than FBFET with a symmetric source/drain.
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)