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Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device
- Authors
- Kim, Sungjun; Cho, Seongjae; Park, Byung-Gook
- Issue Date
- Apr-2016
- Publisher
- IEEK PUBLICATION CENTER
- Keywords
- Electrochemical metallization memory; conductive-bridge random-access memory; silicon nitride; metal-insulator-metal; metal-insulator-silicon
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.16, no.2
- Journal Title
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE
- Volume
- 16
- Number
- 2
- ISSN
- 1598-1657
- Abstract
- In this study, we fabricated Ag-based electrochemical metallization memory devices which is also called conductive-bridge random-access memory (CBRAM) in order to investigate the resistive switching behavior depending on the bottom electrode (BE). RRAM cells of two different layer configurations having Ag/Si3N4/TiN and Ag/Si3N4/p(+) Si are studied for metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) structures, respectively. Switching voltages including forming/set/reset are lower for MIM than for MIS structure. It is found that the workfunction different affects the performances.
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Related Researcher
- Cho, Seong Jae
- IT (Major of Electronic Engineering)