Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structuresopen access
- Authors
- Kim, Kihyun; Kang, Yehwan; Yun, Seungbok; Yang, Changheon; Jung, Eunsik; Hong, Jeongsoo; Kim, Kyunghwan
- Issue Date
- Jun-2022
- Publisher
- MDPI
- Keywords
- silicon carbide; Junction Barrier Schottky; diode; wafer thinning; laser annealing
- Citation
- COATINGS, v.12, no.6
- Journal Title
- COATINGS
- Volume
- 12
- Number
- 6
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/85290
- DOI
- 10.3390/coatings12060777
- ISSN
- 2079-6412
- Abstract
- In this study, we investigated the characteristics of the n-type Ni/SiC ohmic contact using the laser annealing process on thin wafers. The electrical behavior of the ohmic contacts was tested in 4H-SiC JBS diode devices. As a result, a wafer thickness of 100 mu m in the 4H-SiC JBS diode achieved a forward voltage of 1.33 V at 20 A with a laser annealing process using Ni silicide. Using a laser annealing process on a wafer thickness of 100 mu m, an on-resistance decrease of almost 22% was demonstrated. Based on our experimental results, we suggest an alternative laser annealing fabrication scheme to obtain low on-resistance SiC power devices with thin structures after SiC grinding.
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