Density functional theory study on the modification of silicon nitride surface by fluorine-containing molecules (vol 554, 149481, 2021)open access
- Authors
- Chowdhury, T.; Hidayat, R.; Kim, Hye-Lee; Mayangsari, T.R.; Cho, Seongjae; Park, Sangjoon; Jung, Jongwan; Lee, Won-Jun
- Issue Date
- Nov-2022
- Publisher
- Elsevier
- Citation
- Applied Surface Science, v.602
- Journal Title
- Applied Surface Science
- Volume
- 602
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/85442
- DOI
- 10.1016/j.apsusc.2022.154355
- ISSN
- 0169-4332
- Abstract
- The authors regret an incorrect activation energy value in Table 1. When constructing Table 1, we used the activation energy value taken from the reference [1] for the fluorination reaction of silicon oxide with HF. However, the value was corrected from 0.18 eV to 0.77 eV in the erratum [2]. Therefore, we would like to provide the new Table 1 with the corrected value. The third sentence in the second paragraph of page 8 should now read, as follows: The EA values for the fluorination reaction of silicon oxide and silicon surfaces by HF were 0.77 eV and 1.22 eV, as presented in the previous report [22], while it is 2.07 eV for silicon nitride as determined in the present work”. Also, the third sentence of the fourth paragraph of page 8 should now read, as follows: In the TS on the silicon oxide or silicon substrate, a four-membered ring (–Si–O–H–F–) geometry is formed, or the HF is bonded to SiH* to form SiH2F* [22]. These corrections do not change the overall conclusion of the paper. The authors would like to apologize for any inconvenience caused. © 2021 Elsevier B.V.
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