Temperature-Dependent Self-Powered Solar-Blind Photodetector Based on Ag2O/beta-Ga2O3 Heterojunctionopen access
- Authors
- Park, Taejun; Park, Sangbin; Park, Joon Hui; Min, Ji Young; Jung, Yusup; Kyoung, Sinsu; Kang, Tai Young; Kim, Kyunghwan; Rim, You Seung; Hong, Jeongsoo
- Issue Date
- Sep-2022
- Publisher
- MDPI
- Keywords
- Ag2O/beta-Ga2O3; heterojunction; deep ultraviolet; photodetector; post-annealing
- Citation
- NANOMATERIALS, v.12, no.17
- Journal Title
- NANOMATERIALS
- Volume
- 12
- Number
- 17
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/85673
- DOI
- 10.3390/nano12172983
- ISSN
- 2079-4991
- Abstract
- In this study, a high-photoresponsivity self-powered deep ultraviolet (DUV) photodetector based on an Ag2O/beta-Ga2O3 heterojunction was fabricated by depositing a p-type Ag2O thin film onto an n-type beta-Ga2O3 layer. The device characteristics after post-annealing at temperatures ranging from 0 to 400 degrees C were investigated. Our DUV devices exhibited typical rectification characteristics. At a post-annealing temperature of 300 degrees C, the as-fabricated device had a low leakage current of 4.24 x 10(-11) A, ideality factor of 2.08, and a barrier height of 1.12 eV. Moreover, a high photo-responsivity of 12.87 mA/W was obtained at a 100 mu W/cm(2) light intensity at a 254 nm wavelength at zero bias voltage, the detectivity was 2.70 x 10(11) Jones, and the rise and fall time were 29.76, 46.73 ms, respectively. Based on these results, the Ag2O/beta-Ga2O3 heterojunction photodetector operates without an externally applied voltage and has high responsivity, which will help in the performance improvement of ultraviolet sensing systems.
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