Tunable Negative Differential Resistance Effect in a-SZTO/Dielectric/ SZTO Heterostructure TFTs at Room Temperature
- Authors
- Murugan, Balaji; Lee, Sang Yeol
- Issue Date
- Apr-2023
- Publisher
- AMER CHEMICAL SOC
- Keywords
- negative differential resistance; resonant tunneling; heterostructure; peak-to-valley current ratio; heterostructure TFT; a-SZTO
- Citation
- ACS APPLIED ELECTRONIC MATERIALS, v.5, no.4, pp.2345 - 2350
- Journal Title
- ACS APPLIED ELECTRONIC MATERIALS
- Volume
- 5
- Number
- 4
- Start Page
- 2345
- End Page
- 2350
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/87867
- DOI
- 10.1021/acsaelm.3c00178
- ISSN
- 2637-6113
- Abstract
- We experimentally demonstrate the resonant tunneling and negative differential resistance (NDR) in a-SZTO/ dielectric/SZTO heterostructure thin film transistors (TFTs) at room temperature (RT) for the first time. Here, we study the resonant tunneling and the NDR tunability for different middle-layer dielectric and gate biases. The dielectric materials of HfO2, ZrO2, and MgO are used in the a-SZTO/dielectric/SZTO heterostructure devices and are named SHS, SZS, and SMS in this work. The resonant tunneling through an insulator occurs when the energy bands of the two amorphous-SiZnSnO (a-SZTO) are aligned. The previous results of NDR based on resonant tunneling were obtained only using two-dimensional (2D) materials. But we observe the NDR results with a peak-to-valley current ratio (PVCR) of 3 at RT by utilizing the bulk (three-dimensional, 3D) oxide materials for the first time in this work.
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