Nanoscale control of LaAlO3/SrTiO3 metal-insulator transition using ultra-low-voltage electron-beam lithographyopen access
- Authors
- Yang, Dengyu; Hao, Shan; Chen, Jun; Guo, Qing; Yu, Muqing; Hu, Yang; Eom, Kitae; Lee, Jung-Woo; Eom, Chang-Beom; Irvin, Patrick; Levy, Jeremy
- Issue Date
- Dec-2020
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v.117, no.25
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 117
- Number
- 25
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/89539
- DOI
- 10.1063/5.0027480
- ISSN
- 0003-6951
1077-3118
- Abstract
- We describe a method to control the insulator-metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography. Compared to previous reports that utilize conductive atomic force microscope (c-AFM) lithography, this approach can provide comparable resolution (similar to 10nm) at write speeds (10mm/s) that are up to 10000x faster than c-AFM. The writing technique is nondestructive, and the conductive state is reversible via prolonged exposure to air. Transport properties of representative devices are measured at milli-Kelvin temperatures, where superconducting behavior is observed. We also demonstrate the ability to create conducting devices on graphene/LaAlO3/SrTiO3 heterostructures. The underlying mechanism is believed to be closely related to the same mechanism regulating c-AFM-based methods.
- Files in This Item
- There are no files associated with this item.
- Appears in
Collections - ETC > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/89539)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.