AC Electrical Conduction of Cr-Doped SrTiO3 Thin Films with an Oxygen-Deficient Interface Layer
- Authors
- Bach Thang Phan; Eom, Ki Tae; Lee, Jaichan
- Issue Date
- Jun-2017
- Publisher
- SPRINGER
- Keywords
- Resistive switching; polaron hopping conduction; variable-range hopping
- Citation
- JOURNAL OF ELECTRONIC MATERIALS, v.46, no.6, pp 3796 - 3800
- Pages
- 5
- Journal Title
- JOURNAL OF ELECTRONIC MATERIALS
- Volume
- 46
- Number
- 6
- Start Page
- 3796
- End Page
- 3800
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/89545
- DOI
- 10.1007/s11664-016-5243-5
- ISSN
- 0361-5235
1543-186X
- Abstract
- The ac electrical conduction of Cr-doped SrTiO3 thin films with an oxygen-deficient interface layer was investigated as a function of temperature and frequency. The Cr-doped SrTiO3 (Cr-STO) thin films with an ultra-thin (similar to 2 nm) oxygen-deficient layer inserted between the top electrode and the Cr-STO layer exhibited two ac conduction mechanisms, i.e., variable-range hopping and small-polaron hopping conduction, accompanied by a relaxation process. Since high oxygen deficiency induces large lattice distortion in the depletion layer, the first relaxation process occurs at low frequencies in the thin oxygen depletion layer Cr-SrTiO3-delta , and the corresponding conduction behavior follows the small-polaron tunneling model. In the high frequency range, an additional relaxation process is involved and is associated with the variable-range hopping between the localized states in the band gap of the thick Cr-SrTiO3 layer.
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