Nanoscale Channel Gate-Tunable Diodes Obtained by Asymmetric Contact and Adhesion Lithography on Fluoropolymers
- Authors
- Kim, Minseo; Kim, Seongjae; Yoo, Hocheon
- Issue Date
- Aug-2023
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- adhesion lithography; DNTT; nanogap; organic semiconductors; spectroscopy analysis
- Citation
- SMALL, v.19, no.35
- Journal Title
- SMALL
- Volume
- 19
- Number
- 35
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/89831
- DOI
- 10.1002/smll.202208144
- ISSN
- 1613-6810
1613-6829
- Abstract
- Adhesion lithography offers to fabrication of coplanar asymmetric nanogap electrodes with a low-cost and facile process. In this study, a gate-tunable diode with coplanar asymmetric nanogap is fabricated using adhesion lithography. A fluoropolymer material is introduced to the adhesion lithography process to ensure a manufacturing patterning process yield as high as 96.7%. The asymmetric electrodes formed a built-in potential, leading to rectifying behavior. The coplanar electrode structure allowed the use of a gate electrode in vertical contact with the channel, resulting in gate-tunable diode characteristics. The nanoscale channel induced a high current density (3.38 x 10(-7) A center dot cm(-1)), providing a high rectification ratio (1.67 x 10(5) A center dot A(-1)). This rectifier diode is confirmed to operate with pulsed input signals and suggests the gate-tunability of nanogap diodes.
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