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Bridge Transistors: A Study of Bridging Effects and Early Saturation Behaviors
- Authors
- Kim, Seongjae; Lee, Subin; Kim, Chang-Hyun; Yoo, Hocheon
- Issue Date
- Jan-2024
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Bridge transistors; contact resistance; organic semiconductors; saturation voltage (V (Sat)); thin-film transistors (TFTs)
- Citation
- IEEE TRANSACTIONS ON ELECTRON DEVICES, v.71, no.1, pp 759 - 761
- Pages
- 3
- Journal Title
- IEEE TRANSACTIONS ON ELECTRON DEVICES
- Volume
- 71
- Number
- 1
- Start Page
- 759
- End Page
- 761
- ISSN
- 0018-9383
1557-9646
- Abstract
- This brief proposes the use of a bridge transistor as a means of achieving early saturation characteristics of drain current. To investigate the electrical properties of the bridge transistor, we introduce materials capable of forming homojunction 2,7-Dioctyl1benzothieno3,2-b1 benzothiophene (C8-BTBT), heterojunction dinaphtho2,3-b:2',3'-fthieno3,2 -bthiophene (DNTT), and Schottky junction (Au) as bridge layers, along with the C8-BTBT-based channel. Our findings reveal early saturation characteristics of drain current in bridge transistors with Schottky junction. Through contact resistance extraction and 2-D numerical simulation, we suggest that the early current saturation behavior is due to the additional contact resistance and depletion region.
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Related Researcher
- Kim, Chang Hyun
- College of IT Convergence (Major of Electronic Engineering)