Light-Triggerable and Gate-Tunable Negative Differential Resistance in Small Molecules Heterojunction
- Authors
- Kim, Seongjae; Jeon, Yunchae; Lee, Eun Kwang; Kim, Yeong Jae; Kim, Chang-Hyun; Yoo, Hocheon
- Issue Date
- Feb-2024
- Publisher
- AMER CHEMICAL SOC
- Keywords
- Negative differential resistance; heterostructure; organic semiconductors; grain boundary
- Citation
- NANO LETTERS, v.24, no.6, pp 2025 - 2032
- Pages
- 8
- Journal Title
- NANO LETTERS
- Volume
- 24
- Number
- 6
- Start Page
- 2025
- End Page
- 2032
- URI
- https://scholarworks.bwise.kr/gachon/handle/2020.sw.gachon/90629
- DOI
- 10.1021/acs.nanolett.3c04671
- ISSN
- 1530-6984
1530-6992
- Abstract
- Negative differential resistance (NDR), a phenomenon in which the current decreases when the applied voltage is increased, is attracting attention as a unique electrical property. Here, we propose a broad spectral photo/gate cotunable channel switching NDR (CS-NDR) device. The proposed CS-NDR device has superior linear gate-tunable NDR behavior and highly reproducible properties compared to the previously reported NDR devices, as the fundamental mechanism of the CS-NDR device is directly related to a charge transport channel switching by the linear increase of the applied drain voltage. We also experimentally demonstrate that the photoinduced NDR behavior of the CS-NDR device was derived from the grain boundaries of dinaphtho[2;3-b:2' ,3' -f]-thieno[3,2-b]thiophene. Furthermore, this work produces a 9 x 9 CS-NDR device array composed of 81 devices, providing the reproducibility and uniformity of the CS-NDR device. Finally, we successfully demonstrate the detection of text images with 81 CS-NDR devices using the proposed photo/gate cotunable NDR behavior.
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