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SCIE
Carrier Transport Mechanism via a High-k HfO2 Thin Layer Between GaAs LayersGo to Link

Ahn, Joonsung; Kim, Tae Whan

ArticleIssue Date2018CitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.18, no.9, pp.6014 - 6016PublisherAMER SCIENTIFIC PUBLISHERS
SCIE
Effect of the Curved Fin Top Edge on the Electrical Characteristics of FinFETsGo to Link

Ahn, Joonsung; Kim, Tae Whan

ArticleIssue Date2018CitationJournal of Nanoscience and Nanotechnology, v.18, no.3, pp 1837 - 1840PublisherAmerican Scientific Publishers
SCIESCOPUS
Effect of the Nanoscale Bitline String Thickness on the Electric Characteristics of Vertical NAND Flash Memory DevicesGo to Link

Jung, Hyun Soo; Ahn, Joonsung; Kim, Tae Whan

ArticleIssue Date2017CitationJournal of Nanoscience and Nanotechnology, v.17, no.6, pp 4145 - 4148PublisherAmerican Scientific Publishers
SCIESCOPUS
Enhancement of Electrical Characteristics Using a Nanoscale Inserted Gate Structure in FinFETGo to Link

Ahn, Joonsung; Yoo, Keon-Ho; Kim, Tae Whan

ArticleIssue Date2017CitationJournal of Nanoscience and Nanotechnology, v.17, no.10, pp 7223 - 7226PublisherAmerican Scientific Publishers
SCIESCOPUS
The Enhancement of Electrical Characteristics of Tunneling Field-Effect Transistors with the Buried Cylindrical GateGo to Link

Kim, Kee Tae; Jung, Hyun Soo; Ahn, Joonsung; Yoo, Keon-Ho; Kim, Tae Whan

ArticleIssue Date2017CitationJournal of Nanoscience and Nanotechnology, v.17, no.6, pp 4108 - 4111PublisherAmerican Scientific Publishers
SCIESCOPUS
Threshold Voltage Shift Variation of Vertical NAND Flash Memory Devices Dependent on Polysilicon Channel Layer ThicknessGo to Link

Ahn, Joonsung; Kim, Tae Whan

ArticleIssue Date2017CitationJournal of Nanoscience and Nanotechnology, v.17, no.10, pp 7331 - 7334PublisherAmerican Scientific Publishers
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