ScholarWorks@Hanyang University

Browsing by Choi, Chul MinAuthor

All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
전체 가 나 다 라 마 바 사 아 자 차 카 타 파 하

Showing results 1 to 4 of 4

SCISCIESCOPUS
Degradation Characteristics of MgO Based Magnetic Tunnel Junction Caused by Surface Roughness of Ta/Ru Buffer LayersGo to Link

Lee, Jung Min; Choi, Chul Min; Sukegawa, Hiroaki; Lee, Jeong Yong; Mitani, Seiji; Song, Yun-Heub

ArticleIssue Date2016CitationJournal of Nanoscience and Nanotechnology, v.16, no.1, pp 654 - 657PublisherAmerican Scientific Publishers
SCISCIESCOPUSKCI
Effect of an Interface Mg Insertion Layer on the Reliability of a Magnetic Tunnel Junction based on a Co2FeAl Full-Heusler AlloyGo to Link

Lee, Jung-Min; Kil, Gyu Hyun; Lee, Gae Hun; Choi, Chul Min; Song, Yun-Heub; Sukegawa, Hiroaki; Mitani, Seiji

ArticleIssue Date2014CitationJournal of the Korean Physical Society, v.64, no.8, pp 1144 - 1149Publisher한국물리학회
SCISCIESCOPUS
Effect of Mg insertion on stress-induced resistance drift in MgO-based magnetic tunnel junctionsGo to Link

Choi, Chul Min; Oh, Young Taek; Lee, Jeong Yong; Sukegawa, Hiroaki; Mitani, Seiji; Song, Yun Heub

ArticleIssue Date2016CitationElectronics Letters, v.52, no.7, pp 531 - 532PublisherInstitute of Electrical Engineers
SCISCIESCOPUS
Investigation of an erasing method for synaptic behaviour in a phase change device using Ge₁Cu₂Te₃ (GCT)Go to Link

An, Jun Seop; Choi, Chul Min; Shindo, Satoshi; Sutou, Yuji; Jeong, Hong Sik; Song, Yun Heub

ArticleIssue Date2016CitationElectronics Letters, v.52, no.18, pp 1514 - 1515PublisherInstitute of Electrical Engineers
1
CONTACT US

RSS_1.0 RSS_2.0 ATOM_1.0

222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1366

COPYRIGHT © 2024 HANYANG UNIVERSITY.

Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.

BROWSE

한국어