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Showing results 1 to 13 of 13

SCIESCOPUS
2C-Ternary Content Addressable Memory in Memcapacitor Crossbar Array with NAND Flash StructureGo to Link

Hwang, Hwiho; Yu, Junsu; Youn, Sangwook; Choi, Woo Young; Kim, Hyungjin

ArticleIssue Date2025CitationSMALL, v.21, no.9, pp 1 - 11PublisherWILEY-V C H VERLAG GMBH
SCIESCOPUS
A comprehensive review of advanced trends: from artificial synapses to neuromorphic systems with consideration of non-ideal effectsGo to Linkopen access

Kim, Kyuree; Song, Min Suk; Hwang, Hwiho; Hwang, Sungmin; Kim, Hyungjin

ArticleIssue Date2024CitationFrontiers in Neuroscience, v.18, pp 1 - 29PublisherFrontiers Media S.A.
SCIESCOPUSKCI
Annealing Effects on Charge Trap Flash with TAHOS StructureGo to Link

Song, Min Suk; Hwang, Hwiho; Yu, Junsu; Hwang, Sungmin; Kim, Hyungjin

ArticleIssue Date2024CitationJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, v.24, no.4, pp 323 - 331Publisher대한전자공학회
SCIESCOPUS
Coupling-Free Readout Scheme for Memcapacitors With NAND Flash StructureGo to Link

Ahn, Suhyeon; Yu, Junsu; Hwang, Hwiho; Song, Min Suk; Yu, Dayeon; Hwang, Sungmin; Chung, In-Young; Choi, Woo Young; Kim, Hyungjin

ArticleIssue Date2024CitationIEEE Transactions on Electron Devices, v.71, no.8, pp 4670 - 4676PublisherInstitute of Electrical and Electronics Engineers
SCOPUS
Ferroelectric Memcapacitor Crossbar Array with NAND Flash Structure for In-Memory ComputingGo to Link

Hwang, Hwiho; Yu, Junsu; Youn, Sangwook; Kim, Hyungjin

ArticleIssue Date2026Citation2025 IEEE International Electron Devices Meeting (IEDM), pp 1 - 4PublisherInstitute of Electrical and Electronics Engineers Inc.
SCIESCOPUS
Ferroelectric Tunnel Junction Memristor Crossbar Array with Annealing Optimization for In-Memory ComputingGo to Linkopen access

Youn, Sangwook; Hwang, Hwiho; Kim, Hyungjin

ArticleIssue Date2026CitationADVANCED INTELLIGENT SYSTEMS, v.8, no.3, pp 1 - 10PublisherWILEY
SCIESCOPUS
Physical Unclonable Function With Enlarged String Current Variation in NAND Flash Array by WL Selection SchemeGo to Link

Yu, Dayeon; Ahn, Suhyeon; Hwang, Hwiho; Kim, Hyungjin

ArticleIssue Date2025CitationIEEE Transactions on Electron Devices, v.72, no.10, pp 5400 - 5406PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUSKCI
Recent advances in ferroelectric materials, devices, and in-memory computing applicationsGo to Linkopen access

Hwang, Hwiho; Youn, Sangwook; Kim, Hyungjin

ArticleIssue Date2025CitationNANO CONVERGENCE, v.12, no.1, pp 1 - 31PublisherSPRINGER
SCIESCOPUS
True Random Number Generator using Memcapacitor with Charge Trapping LayerGo to Link

Hwang, Hwiho; Song, Min Suk; Youn, Sangwook; Kim, Hyungjin

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.8, pp 1464 - 1467PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Ultra-low-energy physical unclonable function enabled by trap-engineered ferroelectric tunnel junction crossbarGo to Link

Youn, Sangwook; Hwang, Hwiho; Kim, Hyungjin

ArticleIssue Date2026CitationNANO ENERGY, v.152, pp 1 - 13PublisherELSEVIER
SCOPUS
Vertically Stackable Memcapacitor Crossbar Array based on NAND Flash Array StructureGo to Link

Yu, Junsu; Hwang, Hwiho; Kim, Hyungjin; Choi, Woo Young

ArticleIssue Date2025CitationTechnical Digest - International Electron Devices Meeting, pp 1 - 4
SCIESCOPUS
Wordline Input Bias Scheme for Neural Network Implementation in 3D-NAND FlashGo to Linkopen access

Hwang, Hwiho; Kim, Gyeonghae; Yu, Dayeon; Kim, Hyungjin

ArticleIssue Date2025CitationBiomimetics, v.10, no.5, pp 1 - 12PublisherMDPI AG
SCIESCOPUS
ZrO2 seed layer effects on switching characteristics and low-frequency noise in HZO ferroelectric tunnel junction arraysGo to Link

Youn, Sangwook; Hwang, Hwiho; Kim, Hyungjin

ArticleIssue Date2026CitationJOURNAL OF ALLOYS AND COMPOUNDS, v.1050, pp 1 - 10PublisherELSEVIER SCIENCE SA
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