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SCIESCOPUS
Analog Synaptic Transistor with Al-Doped HfO2Ferroelectric Thin Film

Kim, Duho; Jeon, Yu-Rim; Ku, Boncheol; Chung, Chulwon; Kim, Tae Heun; Yang, Sangheok; Won, Uiyeon; Jeong, Taeho; Choi, Changhwan

ArticleIssue Date2021CitationACS APPLIED MATERIALS & INTERFACES, v.13, no.44, pp.52743 - 52753PublisherAMER CHEMICAL SOC
SCIESCOPUS
Bio-realistic synaptic characteristics in the cone-shaped ZnO memristive deviceGo to Linkopen access

Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Kim, Sohyeon; Ku, Boncheol; Choi, Changhwan

ArticleIssue Date2019CitationNPG ASIA MATERIALS, v.11, pp.1 - 15PublisherNATURE PUBLISHING GROUP
SCIESCOPUS
Cellulose Nanocrystal Based Bio-Memristor as a Green Artificial Synaptic Device for Neuromorphic Computing ApplicationsGo to Link

Hussain, Tassawar; Abbas, Haider; Youn, Chulmin; Lee, Hojin; Boynazarov, Turgun; Ku, Boncheol; Jeon, Yu-Rim; Han, Hoonhee; Lee, Jong Hyeon; Choi, Changhwan, et al.

ArticleIssue Date2022CitationADVANCED MATERIALS TECHNOLOGIES, v.7, no.2, pp 1 - 13PublisherWILEY
SCISCIESCOPUS
Comparative study of Al2O3, HfO2, and HfAlOx for improved self-compliance bipolar resistive switchingGo to Link

Sokolov, Andrey S.; Son, Seok Ki; Lim, Donghwan; Han, Hoon Hee; Jeon, Yu-Rim; Lee, Jae Ho; Choi, Changhwan

ArticleIssue Date2017CitationJournal of the American Ceramic Society, v.100, no.12, pp 5638 - 5648PublisherAmerican Ceramic Society
SCISCIESCOPUS
Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic DeviceGo to Linkopen access

Abbas, Yawar; Jeon, Yu-Rim; Sokolov, Andrey Sergeevich; Kim, Sohyeon; Ku, Boncheol; Choi, Changhwan

ArticleIssue Date2018CitationScientific Reports, v.8, no.1PublisherNature Publishing Group
SCIESCOPUS
Electric-field-enhanced aluminum-induced crystallization of amorphous silicon thin film using decreasing stepwise current methodGo to Link

Jeon, Yu-Rim; Ryu, Kyongtae; Lee, Hee-Lak; Moon, Seung Jae

ArticleIssue Date2023CitationJournal of Non-Crystalline Solids, v.620, pp 1 - 10PublisherElsevier BV
SCIESCOPUS
Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching deviceGo to Link

Kim, Sohyeon; Abbas, Yawar; Jeon, Yu-Rim; Sokolov, Andrey Sergeevich; Ku, Boncheol; Choi, Changhwan

ArticleIssue Date2018CitationNANOTECHNOLOGY, v.29, no.41PublisherIOP PUBLISHING LTD
SCIESCOPUS
Improved switching and synapse characteristics using PEALD SiO2 thin film in Cu/SiO2/ZrO2/Pt deviceGo to Link

Lee, Dohee; Sokolov, Andrey S.; Ku, Boncheol; Jeon, Yu-Rim; Kim, Ho Du; Kim, Tae Hyeon; Kim, Hwan Gun; Choi, Chang hwan

ArticleIssue Date2021CitationApplied Surface Science, v.547, pp.1 - 10PublisherElsevier B.V.
SCIESCOPUS
Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2Go to Link

Jung, Woo Suk; Lim, Donghwan; Han, Hoonhee; Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Choi, Changhwan

ArticleIssue Date2018CitationSOLID-STATE ELECTRONICS, v.149, pp.52 - 56PublisherPERGAMON-ELSEVIER SCIENCE LTD
SCISCIESCOPUS
Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structureGo to Link

Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Kim, Sohyeon; Ku, Boncheol; Lim, Donghwan; Han, Hoonhee; Chae, Myeong Gyoon; Lee, Jaeho; Ha, Beom Gil; Choi, Changhwan

ArticleIssue Date2018CitationApplied Surface Science, v.434, pp 822 - 830PublisherElsevier BV
SCIESCOPUS
Photo-synaptic properties of CH3NH3Pb1-xMnxBr2x+1 hybrid perovskite thin film-based artificial synapseGo to Link

Jeon, Yu-Rim; Lee, Dohee; 조한빈; 구본철; Bin Im, Won; Choi, Changhwan

ArticleIssue Date2023CitationCERAMICS INTERNATIONAL, v.49, no.7, pp 11140 - 11148PublisherELSEVIER SCI LTD
SCIESCOPUS
Structural engineering of tantalum oxide based memristor and its electrical switching responses using rapid thermal annealingGo to Link

Abbas, Yawar; Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Kim, Sohyeon; Ku, Boncheol; Choi, Changhwan

ArticleIssue Date2018CitationJOURNAL OF ALLOYS AND COMPOUNDS, v.759, pp.44 - 51PublisherELSEVIER SCIENCE SA
SCISCIESCOPUS
Suppressed charge trapping characteristics of (NH₄)₂Sx passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectricGo to Link

Han, Hoon Hee; Lim, Donghwan; Sergeevich, Andrey Sokolov; Jeon, Yu-Rim; Lee, Jae Ho; Son, Seok Ki; Choi, Changhwan

ArticleIssue Date2017CitationMicroelectronic Engineering, v.178, pp 240 - 244PublisherElsevier BV
SCIESCOPUS
Suppressed Stochastic Switching Behavior and Improved Synaptic Functions in an Atomic Switch Embedded with a 2D NbSe2 MaterialGo to Link

Jeon, Yu-Rim; Choi, Jungmin; Kwon, Jung-Dae; Park, Min Hyuk; Kim, Yonghun; Choi, Changhwan

ArticleIssue Date2021CitationACS APPLIED MATERIALS & INTERFACES, v.13, no.8, pp.10161 - 10170PublisherAMER CHEMICAL SOC
SCIESCOPUS
Synaptic Characteristics of Atomic Layer-Deposited Ferroelectric Lanthanum-Doped HfO2 (La:HfO2) and TaN-Based Artificial SynapsesGo to Link

Jeon, Yu-Rim; Kim, Duho; 구본철; Chung, Chulwon; Choi, Changhwan

ArticleIssue Date2023CitationACS Applied Materials & Interfaces, v.15, no.49, pp 57359 - 57368PublisherAmerican Chemical Society
SCIESCOPUS
Synaptic Characteristics of Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors and Synapse-Neuron Arrayed Neuromorphic Hardware Systemopen access

Jeon, Yu-Rim; Kim, Jeong-Hoon; Akinwande, Deji; Choi, Changhwan

ArticleIssue Date2024CitationAdvanced Intelligent Systems, v.6, no.6, pp 1 - 8PublisherWiley
SCIESCOPUS
The 3D Monolithically Integrated Hardware Based Neural System with Enhanced Memory Window of the Volatile and Non-Volatile DevicesGo to Linkopen access

Jeon, Yu-Rim; Seo, Donguk; Lee, Yoonmyung; Akinwande, Deji; Choi, Changhwan

ArticleIssue Date2024CitationAdvanced Science, v.11, no.31, pp 1 - 10PublisherWiley-VCH Verlag
SCISCIESCOPUS
The effects of process temperature on the work function modulation of ALD HfO₂ MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursorGo to Link

Kim, Young Jin; Lim, Donghwan; Han, Hoon Hee; Sergeevich, Andrey Sokolov; Jeon, Yu-Rim; Lee, Jae Ho; Son, Seok Ki; Choi, Changhwan

ArticleIssue Date2017CitationMicroelectronic Engineering, v.178, pp 284 - 288PublisherElsevier BV
SCIESCOPUS
Thin Si wafer substrate bonding and de-bonding below 250 degrees C for the monolithic 3D integrationGo to Link

Jeon, Yu-Rim; Han, Hoonhee; Choi, Changhwan

ArticleIssue Date2018CitationSENSORS AND ACTUATORS A-PHYSICAL, v.281, pp.222 - 228PublisherELSEVIER SCIENCE SA
SCIESCOPUS
Volatile threshold switching and synaptic properties controlled by Ag diffusion using Schottky defectsGo to Link

Jeon, Yu-Rim; Akinwande, Deji; Choi, Changhwan

ArticleIssue Date2024CitationNanoscale Horizons, v.9, no.5, pp 853 - 862PublisherRoyal Society of Chemistry
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