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A six-level ferroelectric storage cell based on a bidirectional imprint field Go to Link

Kim, Chaeheon; Hwang, Junghyeon; Shin, Hunbeom; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationJournal of Materials Chemistry C, v.12, no.37, pp 15188 - 15200PublisherRoyal Society of Chemistry

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An ultra-thin InO interlayer as an oxygen reservoir for defect passivation and enhanced ferroelectricity in hafnia devices Go to Link

Hwang, Junghyeon; Kim, Chaeheon; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2025CitationJOURNAL OF MATERIALS CHEMISTRY C, v.13, no.48, pp 23819 - 23830PublisherROYAL SOC CHEMISTRY

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Damage mitigation as a strategy to achieve high ferroelectricity and reliability in hafnia for random-access-memory Go to Link

Hwang, Junghyeon; Shin, Hunbeom; Kim, Chaeheon; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationJournal of Materials Chemistry C, v.13, no.1, pp 214 - 229PublisherRoyal Society of Chemistry

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Design Methodology for Low-Voltage Operational (≤1 V) FRAM Cell Capacitors and Approaches for Overcoming Disturb Issues in 1T-nC Arrays: Experimental & Modeling Go to Link

Lee, Sangho; Kim, Giuk; Kim, Chaeheon; Jung, Yangjin; Hwang, Jeonghyun; Nam, Yunseok; Shin, Mincheol; Goh, Youngin; Ryu, Mintae; Suh, Jihye, et al.

ArticleIssue Date2025CitationTechnical Digest - International Electron Devices Meeting, pp 1 - 4

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Enhanced performance of hafnia self-rectifying ferroelectric tunnel junctions at cryogenic temperatures Go to Link open access

Hwang, Junghyeon; Kim, Chaeheon; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationNano Convergence, v.11, no.1, pp 1 - 9Publisher나노기술연구협의회

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Enhancement of performance and reliability in MOSFETs via high-pressure microwave annealing Go to Link

Kang, Geonhyeong; Shin, Hunbeom; Kim, Seungyeob; Zhang, Lingwei; Kim, Giuk; Lee, Sujeong; Nam, Yunseok; Kim, Chaeheon; Kim, Hoon; Ahn, Jinho, et al.

ArticleIssue Date2025CitationJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, v.43, no.1, pp 1 - 6PublisherAmerican Institute of Physics

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Interface engineering of oxidized Mo electrodes for imprint stability and enhanced endurance in hafnia-based ferroelectric devices Go to Link

Hwang, Junghyeon; Kim, Chaeheon; Kang, Geonhyeong; Kim, Yongsu; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2025CitationJOURNAL OF MATERIALS CHEMISTRY C, v.13, no.47, pp 23570 - 23576PublisherROYAL SOC CHEMISTRY

SCOPUS

Low-Damage Processed and High-Pressure Annealed High-k Hafnium Zirconium Oxide Capacitors near Morphotropic Phase Boundary with Record-Low EOT of 2.4Å & high-k of 70 for DRAM Technology

Gaddam, Venkateswarlu; Hwang, Junghyeon; Shin, Hunbeom; Kim, Chaeheon; Kim, Giuk; Kim, Hyung-Jun; Lee, Jooho; Kim, Hyun-Cheol; Park, Bumsu; Lim, Suhwan, et al.

ArticleIssue Date2024CitationDigest of Technical Papers - Symposium on VLSI Technology, pp 1 - 2

SCIESCOPUS

Monolithically Integrated Complementary Ferroelectric FET XNOR Synapse for the Binary Neural Network Go to Link

Hwang, Junghyeon; Joh, Hongrae; Kim, Chaeheon; Ahn, Jinho; Jeon, Sanghun

ArticleIssue Date2024CitationACS Applied Materials & Interfaces, v.16, no.2, pp 2467 - 2476PublisherAmerican Chemical Society

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Browsing by Kim, ChaeheonAuthor

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