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High-temperature interfacial stability of In2O3 FETs with SiO2 versus Al2O3 insulators enabling 3 nm channel scaling Go to Link

Oh, Hye-Jin; Lee, Jun-Yeoub; Beom, Jun Young; Sun, Ji Eun; Lee, Chi-Hoon; Park, Chang-Kyun; Kim, Duho; Kim, Minhyuk; Lee, Junseok; Cho, Seunghyun, et al.

ArticleIssue Date2026CitationApplied Surface Science, v.730, pp 1 - 6PublisherElsevier B.V.

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Hydrogen-State-Engineered Oxide Semiconductor Channels Enabling Reliable 2T0C DRAM Operation Go to Link open access

Lee, Jun-Yeoub; Hwang, Taewon; Choi, Su-Hwan; Oh, Hye-Jin; Park, Chang-Kyun; Park, Jin-Seong

ArticleIssue Date2026CitationADVANCED ELECTRONIC MATERIALS, v.12, no.11, pp 1 - 9PublisherWILEY

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Reduction of trap density in high-k dielectrics through optimized ALD process and high-pressure deuterium annealing

Hwang, Taewon; Choi, Su-Hwan; Song, Ki-Cheol; Lee, Yeonhee; Kwag, Jae-Hyeok; Lee, Jun-Yeoub; Park, Chang-Kyun; Park, Jin-Seong

ArticleIssue Date2025CitationMaterials Science in Semiconductor Processing, v.191, pp 1 - 8PublisherPergamon Press

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Tailoring the number of lines for IGO-channel 2T0C DRAM comparable to conventional 2-line operation 1T1C structure for highly scaled cell volume Go to Link open access

Kwag, Jae-Hyeok; Choi, Su-Hwan; Kim, Daejung; Lee, Jun-Yeoub; Hwang, Taewon; Oh, Hye-Jin; Park, Chang-Kyun; Park, Jin-Seong

ArticleIssue Date2025CitationInternational Journal of Extreme Manufacturing, v.7, no.5, pp 1 - 11PublisherIOP Publishing

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Browsing by Lee, Jun-YeoubAuthor

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