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Demonstration of Ferroelectric-Gate Field-Effect Transistors with Recessed Channels Go to Link

Lee, Kitae; Kwak, Been; Kim, Sihyun; Kwon, Daewoong

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.2, pp 180 - 183PublisherInstitute of Electrical and Electronics Engineers

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Low-Frequency Noise Characteristics of Recessed Channel Ferroelectric Field-Effect Transistors Go to Link

Kwak, Been; Kim, Jangsaeng; Lee, Kitae; Shin, Wonjun; Kwon, Daewoong

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.11, pp 2118 - 2121PublisherInstitute of Electrical and Electronics Engineers

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Scaling Effects on Memory Characteristics of Ferroelectric Field-effect Transistors Go to Link

Lee, Kitae; Yim, Jiyong; Shin, Wonjun; Kim, Sihyun; Kwon, Daewoong

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.5, pp 805 - 808PublisherInstitute of Electrical and Electronics Engineers

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Suppression of Gate-Induced-Drain-Leakage Utilizing Local Polarization in Ferroelectric-Gate Field-Effect Transistors for DRAM Applications Go to Link

Kwak, Been; Lee, Kitae; Kim, Sihyun; Kwon, Daewoong

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.5, pp 813 - 816PublisherInstitute of Electrical and Electronics Engineers

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Browsing by Lee, KitaeAuthor

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