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Characteristics of Nano-Laminated Al-Doped ZnO (AZO) Multilayers

Choi, Moonsuk; Lim, Donghwan; Kim, Jinok; Park, Jin-Hong; Choi, Changhwan

ArticleIssue Date2016CitationJournal of Nanoscience and Nanotechnology, v.16, no.11, pp 11715 - 11721PublisherAmerican Scientific Publishers

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Chemical bath deposited ZnS buffer layer for Cu(In,Ga)Se-2 thin film solar cell Go to Link

Hong, Jiyeon; Lim, Donghwan; Eo, Young-Joo; Choi, Changhwan

ArticleIssue Date2018CitationApplied Surface Science, v.432, pp 250 - 254PublisherElsevier BV

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Comparative study of Al2O3, HfO2, and HfAlOx for improved self-compliance bipolar resistive switching Go to Link

Sokolov, Andrey S.; Son, Seok Ki; Lim, Donghwan; Han, Hoon Hee; Jeon, Yu-Rim; Lee, Jae Ho; Choi, Changhwan

ArticleIssue Date2017CitationJournal of the American Ceramic Society, v.100, no.12, pp 5638 - 5648PublisherAmerican Ceramic Society

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Electrical characteristics of ALD La2O3 capping layers using different lanthanum precursors in MOS devices with ALD HfO2, HfSiOx, and HfSiON gate dielectrics Go to Link

Lim, Donghwan; Jung, Woo Suk; Kim, Young Jin; Choi, Changhwan

ArticleIssue Date2015CitationMicroelectronic Engineering, v.147, pp 206 - 209PublisherElsevier BV

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Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al₂O₃ composition in atomic layer deposited HfAlOx gate dielectrics Go to Link

Lim, Donghwan; Lee, Jae Ho; Choi, Changhwan

ArticleIssue Date2017CitationMicroelectronic Engineering, v.178, pp 266 - 270PublisherElsevier BV

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Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2 Go to Link

Jung, Woo Suk; Lim, Donghwan; Han, Hoonhee; Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Choi, Changhwan

ArticleIssue Date2018CitationSOLID-STATE ELECTRONICS, v.149, pp.52 - 56PublisherPERGAMON-ELSEVIER SCIENCE LTD

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Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure Go to Link

Sokolov, Andrey Sergeevich; Jeon, Yu-Rim; Kim, Sohyeon; Ku, Boncheol; Lim, Donghwan; Han, Hoonhee; Chae, Myeong Gyoon; Lee, Jaeho; Ha, Beom Gil; Choi, Changhwan

ArticleIssue Date2018CitationApplied Surface Science, v.434, pp 822 - 830PublisherElsevier BV

SCIESCOPUS

Low Gate Leakage Current and Interface State Density of Atomic Layer Deposition Al2O3 SiC MOS Device with NH3 Plasma Treatment Go to Link

Heo, Seung Chan; Jung, Woo Suk; Lim, Donghwan; Yoo, Gwangwe; Park, Jin-Hong; Choi, Changhwan

ArticleIssue Date2016CitationScience of Advanced Materials, v.8, no.9, pp 1866 - 1869PublisherAmerican Scientific Publishers

SCISCIESCOPUS

Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H-2 plasma passivation and post metallization annealing Go to Link

Heo, Seung Chan; Lim, Donghwan; Jung, Woo Suk; Choi, Rino; Yu, Hyun-Yong; Choi, Changhwan

ArticleIssue Date2015CitationMicroelectronic Engineering, v.147, pp 239 - 243PublisherElsevier BV

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Residue-Free Silver Nano Patterns Fabricated by Reverse Direct Imprinting Go to Link

Kim, Dohyung; Gil, Youngin; Choi, Moon Suk; Lim, Donghwan; Yoo, Gwangwee; Park, Jin-Hong; Choi, Changhwan

ArticleIssue Date2016CitationJournal of Nanoscience and Nanotechnology, v.16, no.12, pp 12983 - 12987PublisherAmerican Scientific Publishers

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Suppressed charge trapping characteristics of (NH₄)₂Sx passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric Go to Link

Han, Hoon Hee; Lim, Donghwan; Sergeevich, Andrey Sokolov; Jeon, Yu-Rim; Lee, Jae Ho; Son, Seok Ki; Choi, Changhwan

ArticleIssue Date2017CitationMicroelectronic Engineering, v.178, pp 240 - 244PublisherElsevier BV

SCIESCOPUS

Synthesis of P-Type ZnO Thin Films with Arsenic Doping and Post Annealing Go to Link

Chung, Chulwon; Kim, Young Jin; Han, Hoon Hee; Lim, Donghwan; Jung, Woo Suk; Choi, Moon Suk; Nam, Hyo-Jik; Son, Seok-Ki; Sergeevich, Andrey Sokolov; Park, Jin-Hong, et al.

ArticleIssue Date2016CitationScience of Advanced Materials, v.8, no.9, pp 1857 - 1860PublisherAmerican Scientific Publishers

SCISCIESCOPUS

The Effect of Post-Fabrication Annealing on an Amorphous IGZO Visible-Light Photodetector Go to Link

Park, Yongkook; Park, Hyung-Youl; Kang, Dong-Ho; Kim, Gwang-Sik; Lim, Donghwan; Yu, Hyun-Yong; Choi, Changhwan; Park, Jin-Hong

ArticleIssue Date2016CitationJournal of Nanoscience and Nanotechnology, v.16, no.11, pp 11745 - 11749PublisherAmerican Scientific Publishers

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The effects of (NH4)(2)S-x treatment on n-GaN MOS device with nano-laminated ALD HfAlOx and Ru gate stack Go to Link

Lim, Donghwan; Jung, Woo Suk; Choi, Moon Suk; Gil, Youngin; Choi, Changhwan

ArticleIssue Date2015CitationMicroelectronic Engineering, v.147, pp 210 - 214PublisherElsevier BV

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The effects of process temperature on the work function modulation of ALD HfO₂ MOS device with plasma enhanced ALD TiN metal gate using TDMAT precursor Go to Link

Kim, Young Jin; Lim, Donghwan; Han, Hoon Hee; Sergeevich, Andrey Sokolov; Jeon, Yu-Rim; Lee, Jae Ho; Son, Seok Ki; Choi, Changhwan

ArticleIssue Date2017CitationMicroelectronic Engineering, v.178, pp 284 - 288PublisherElsevier BV

SCIESCOPUS

The Effects of Substrate Temperature on the Properties of Kesterite Cu2ZnSnS4 Thin Films Deposited Using a Single Quaternary Target Go to Link

Yoo, Dongjun; Choi, Moon Suk; Lim, Donghwan; Choi, Changhwan

ArticleIssue Date2017CitationNanoscience and Nanotechnology Letters, v.9, no.4, pp 537 - 543PublisherAmerican Scientific Publishers

SCISCIESCOPUS

The Post Annealing to Control the Number of Layers of 2D MoS2 and SnS2

Choi, Moonsuk; Lim, Donghwan; Sergeevich, Andrey Sokolov; Son, Seok Ki; Kim, Young Jin; Han, Hoon Hee; Choi, Changhwan

ArticleIssue Date2016CitationJournal of Nanoscience and Nanotechnology, v.16, no.11, pp 11658 - 11661PublisherAmerican Scientific Publishers

SCISCIESCOPUS

Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET Go to Link

Kang, Soo Cheol; Lim, Donghwan; Lim, Sung Kwan; Noh, Jinwoo; Kim, Seung-Mo; Lee, Sang Kyung; Choi, Changhwan; Lee, Byoung Hun

ArticleIssue Date2018CitationJapanese Journal of Applied Physics, v.57, no.4PublisherIOP Publishing Ltd

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Browsing by Lim, DonghwanAuthor

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