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Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al₂O₃ composition in atomic layer deposited HfAlOx gate dielectricsImproved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al2O3 composition in atomic layer deposited HfAlOx gate dielectrics
- Other Titles
- Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al2O3 composition in atomic layer deposited HfAlOx gate dielectrics
- Authors
- Lim, Donghwan; Lee, Jae Ho; Choi, Changhwan
- Issue Date
- Jun-2017
- Publisher
- ELSEVIER
- Keywords
- TFET; Subthreshold swing; Hafnium aluminum oxide; Atomic layer deposition
- Citation
- MICROELECTRONIC ENGINEERING, v.178, pp.266 - 270
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONIC ENGINEERING
- Volume
- 178
- Start Page
- 266
- End Page
- 270
- ISSN
- 0167-9317
- Abstract
- We have studied the electrical characteristics of both n-type and p-type fully depleted silicon on insulator (FDSOI) tunnel field-effect transistors (TFETs) by modulating Al₂O₃ fraction (25%, 50%) within atomic layer deposited HfAlOx gate dielectric. Compared to HfO₂ alone, lower subthreshold swing (S.S), higher I-on,/I-off, and stronger threshold voltage (V-th) immunity against electrical stress are obtained for both n-type and p-type TFETs by adopting nano-laminated atomic layer deposited HfAlOx, attributed to the increased band gap and interfacial layer scavenging effect.
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)