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Browsing by Park, Joon SeokAuthor

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Compositional tailoring of indium-free GZO layers via plasma-enhanced atomic layer deposition for highly stable IGZO/GZO TFTGo to Linkopen access

Oh, Hye-Jin; Kim, Yoon-Seo; Jeong, Hyun-Jun; Lee, Sunhee; Park, Joon Seok; Park, Jin-Seong

ArticleIssue Date2024CitationJOURNAL OF INFORMATION DISPLAY, v.25, no.3, pp 295 - 303PublisherTAYLOR & FRANCIS LTD
SCIESCOPUS
Exceptional Immunity of Drain-Induced Barrier Lowering Effect in a-IGZTO Transistors via Favorable Coupling Effects of Metal-H BondingGo to Link

Kim, Gwang-Bok; Kim, Se Eun; Kim, Yena; Son, Kyeong-Seok; Park, Joon Seok; Lee, Sunhee; Jeong, Jae Kyeong

ArticleIssue Date2024CitationIEEE Electron Device Letters, v.45, no.11, pp 2130 - 2133PublisherInstitute of Electrical and Electronics Engineers
SCIESCOPUS
Reliability Engineering of High-Mobility IGZO Transistors via Gate Insulator Heterostructures Grown by Atomic Layer DepositionGo to Linkopen access

김윤서; Hwang, Taewon; Oh, Hye-Jin; Park, Joon Seok; 박진성

ArticleIssue Date2024CitationAdvanced Materials Interfaces, v.11, no.15, pp 1 - 8PublisherJohn Wiley and Sons Ltd
SCIESCOPUS
Reliability Improvement of High Mobility Oxide TFTs Based on Hydrogen-Resistant PEALD Al2O3 Gate Insulators Grown with N2O PlasmaGo to Link

Kim, Sang-Hyun; Kim, Yoon-Seo; Hwang, Taewon; Kim, Tae Heon; Koo, Haklim; Park, Joon Seok; Park, Jin-Seong

ArticleIssue Date2025CitationACS Applied Materials & Interfaces, v.17, no.9, pp 14168 - 14178PublisherAmerican Chemical Society
SCIESCOPUS
Review of recent developments in amorphous oxide semiconductor thin-film transistor devicesGo to Link

Park, Joon Seok; Maeng, Wan-Joo; Kim, Hyun-Suk; Park, Jin-Seong

ArticleIssue Date2012CitationTHIN SOLID FILMS, v.520, no.6, pp.1679 - 1693PublisherELSEVIER SCIENCE SA
SCIESCOPUS
Semiconductor behavior of Li doped ZnSnO thin film grown by mist-CVD and the associated device propertyGo to Link

Lim, Jun Hyung; Jeong, Hyun-Jun; Oh, Keun-Tae; Kim, Dong-Hyun; Park, Joon Seok; Park, Jin-Seong

ArticleIssue Date2018CitationJOURNAL OF ALLOYS AND COMPOUNDS, v.762, pp.881 - 886PublisherELSEVIER SCIENCE SA
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