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Achieving High Carrier Mobility Exceeding 70 cm(2)/Vs in Amorphous Zinc Tin Oxide Thin-Film Transistors Go to Link

Kim, Sang Tae; Shin, Yeonwoo; Yun, Pil Sang; Bae, Jong Uk; Chung, In Jae; Jeong, Jae Kyeong

ArticleIssue Date2017CitationElectronic Materials Letters, v.13, no.5, pp 406 - 411Publisher대한금속·재료학회

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Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer Go to Link

Cho, Min Hoe; Seol, Hyunju; Song, Aeran; Choi, Seonjun; Song, Yun Heub; Yun, Pil Sang; Chung, Kwun-Bum; Bae, Jong Uk; Park, Kwon-Shik; Jeong, Jae Kyeong

ArticleIssue Date2019CitationIEEE Transactions on Electron Devices, v.66, no.4, pp 1783 - 1788PublisherInstitute of Electrical and Electronics Engineers

SCIESCOPUS

High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Atomic Layer Deposition Go to Link

Cho, Min Hoe; Seol, Hyunju; Yang, Hoichang; Yun, Pil Sang; Bae, Jong Uk; Park, Kwon-Shik; Jeong, Jae Kyeong

ArticleIssue Date2018CitationIEEE ELECTRON DEVICE LETTERS, v.39, no.5, pp.688 - 691PublisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

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Browsing by Yun, Pil SangAuthor

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