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High-Performance Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Fabricated by Atomic Layer Deposition
- Authors
- Cho, Min Hoe; Seol, Hyunju; Yang, Hoichang; Yun, Pil Sang; Bae, Jong Uk; Park, Kwon-Shik; Jeong, Jae Kyeong
- Issue Date
- May-2018
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Atomic layer deposition; high mobility; a-IGZO; high performance; thin-film transistors
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.39, no.5, pp.688 - 691
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 39
- Number
- 5
- Start Page
- 688
- End Page
- 691
- ISSN
- 0741-3106
- Abstract
- This letter reports the fabrication of high-performance amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) via atomic layer deposition at a substrate temperature of 250 degrees C. The film thickness of In2O3, Ga2O3, and ZnO varied linearly with the number of deposition cycles. The cation composition of the IGZO film was controlledby an alternate stacking of In2O3, Ga2O3, and ZnO atomic layers. The fabricated a-IGZO TFTs exhibited a high electron mobility of 22.1 cm(2)/Vs, threshold voltage of 2.41 V, subthreshold gate swing of 0.30 V/decade, and an I-ON/(OFF) ratio of > 1 x 10(8).
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)