Atomic layer chemical vapor deposition of SiO2 thin films using a chlorine-free silicon precursor for 3D NAND applications
- Authors
- Baek, GeonHo; Baek, Ji-hoon; Kim, Hye-mi; Lee, Seunghwan; Jin, Yusung; Park, Hyung Soon; Kil, Deok-Sin; Kim, Sangho; Park, Yongjoo; Park, Jin-Seong
- Issue Date
- Jul-2021
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Cl-free Si precursor; High-temperature process; Thermal atomic layer deposition; 3D NAND flash memory; Tunneling oxide layer
- Citation
- CERAMICS INTERNATIONAL, v.47, no.13, pp.19036 - 19042
- Indexed
- SCIE
SCOPUS
- Journal Title
- CERAMICS INTERNATIONAL
- Volume
- 47
- Number
- 13
- Start Page
- 19036
- End Page
- 19042
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1003
- DOI
- 10.1016/j.ceramint.2021.03.249
- ISSN
- 0272-8842
- Abstract
- Atomic layer deposition and atomic layer chemical vapor deposition (ALD, ALCVD) of SiO2 films were investigated over a wide range of high temperatures (from 525 degrees C to 700 degrees C) using chlorine-free amino silane as the Si precursor and O-3 as the oxygen reactant. The ALD window occurred at 550-600 degrees C. The growth per cycle (GPC) of the SiO2 films was about 1.14-1.58 angstrom/cycle for deposition temperatures between 525 and 700 degrees C. There were no chlorine impurities detected in any of the deposited ALCVD films. Above a deposition temperature of 750 degrees C, the SiO2 films exhibited conventional chemical vapor deposition (CVD) behavior due to precursor decomposition, as evidenced by high GPC (5.51 angstrom/cycle) and a significant impurity content (carbon 0.2 at% and nitrogen 0.4 at%). The SiO2 films had high film density (2.3 g/cm(3)), minimal roughness (rms similar to 0.16 nm). In addition, the wet etch rate (WER) of the SiO2 films decreased from 3.0 to 2.1 nm/min. The ALD SiO2 film at 600 degrees C exhibited excellent electrical performance, such as a leakage current density of 5.03 x 10(-9) A/cm(2) (at 3 MV/cm) and a breakdown field of 10.3 MV/cm.
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