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The Electrical Performance Difference of TFTs Using SiOx Gate Insulator Deposited by PECVD and PEALD with DIPAS Precursor

Authors
박진성
Issue Date
4-Feb-2020
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/10326
Conference Name
The 27th Korean Conference on Semiconductors (KCS 2020)
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서울 공과대학 > 서울 신소재공학부 > 2. Conference Papers

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Park, Jinseong
COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)
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