Extremely high photoconductivity ultraviolet-light sensor using amorphous In-Ga-Zn-O thin-film-transistor
- Authors
- Park, Jin-Seong; Seo, Hyung-Tak; Park, Jea-Gun
- Issue Date
- Jun-2021
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- IGZO; TFT; UV sensor; ALD; Photoconductivity
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.78, no.12, pp.1221 - 1226
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 78
- Number
- 12
- Start Page
- 1221
- End Page
- 1226
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/1091
- DOI
- 10.1007/s40042-021-00205-z
- ISSN
- 0374-4884
- Abstract
- An amorphous (alpha) indium-gallium-zinc-oxide (IGZO) thin-film-transistor (TFT) was developed as a precise ultraviolet-light (UV-light) sensor, which is extremely sensitive to photoconductivity. A higher absorption of UV-light via a longer UV-light irradiation time and a higher UV-light intensity shifted the threshold voltage (V-th) to a negatively higher voltage and then saturated above a specific UV-light irradiation time. Particularly, the photoconductivity (i.e., V-th) shifts were evidently dependent on the oxygen vacancy (V-O)-induced defect density of an ALD alpha-IGZO channel; in turn, a higher V-O-induced defect density led to a higher photoconductivity shift. Additionally, the V-th saturation time in an ALD alpha-IGZO TFT decreased rapidly with increasing UV-light intensity; in particular, a higher V-O-induced defect density presented a smaller decay constant of the V-th saturation time. Furthermore, the V-th after stopping the UV-light irradiation was rapidly recovered to the condition as without UV-light irradiation condition and a higher V-O-induced defect density exhibited a longer recovery time.
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