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Hot-Carrier Degradation Estimation of a Silicon-on-Insulator Tunneling FET Using Ambipolar Characteristics
- Authors
- Kang, Soo Cheol; Lim, Donghwan; Kang, Seok Jin; Lee, Sang Kyung; Choi, Changhwan; Lee, Dong Seon; Lee, Byoung Hun
- Issue Date
- Nov-2019
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Stress; Junctions; Logic gates; TFETs; Human computer interaction; Tunneling; Degradation; Tunneling FET; ambipolar current; hot-carrier stress; interface degradation; relaxation; degradation region
- Citation
- IEEE ELECTRON DEVICE LETTERS, v.40, no.11, pp.1716 - 1719
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE ELECTRON DEVICE LETTERS
- Volume
- 40
- Number
- 11
- Start Page
- 1716
- End Page
- 1719
- ISSN
- 0741-3106
- Abstract
- The unique degradation behavior of a tunneling field-effect transistor (TFET) under hot-carrier injection (HCI) stress has been previously investigated. However, while the source side (p⁺/p junction) of degradation (due to HCI stress) has been extensively studied, the drain side (p/n⁺ junction) has not been investigated yet. Our study revealed that both bulk oxide and interfacial layer degradation occurred at the drain side, while an interfacial layer degradation was dominant at the source side at 300 K. This evidences a unique degradation mechanism of the tunneling FET.
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Related Researcher
- Choi, Chang hwan
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)