MIT characteristic of VO₂ thin film deposited by ALD using vanadium oxytriisopropoxide precursor and H₂O reactantopen accessMIT characteristic of VO2 thin film deposited by ALD using vanadium oxytriisopropoxide precursor and H2O reactant
- Other Titles
- MIT characteristic of VO2 thin film deposited by ALD using vanadium oxytriisopropoxide precursor and H2O reactant
- Authors
- Shin, Changhee; Lee, Namgue; Choi, Hyeongsu; Park, Hyunwoo; Jung, Chanwon; Song, Seokhwi; Yuk, Hyunwoo; Kim, Youngjoon; Kim, Jong-Woo; Kim, Keunsik; Choi, Youngtae; Seo, Hyungtak; Jeon, Hyeongtag
- Issue Date
- Oct-2019
- Publisher
- KOREAN ASSOC CRYSTAL GROWTH, INC
- Keywords
- Atomic layer deposition; Vanadium dioxide; Metal insulator transition; Sneak-path current; Selection device
- Citation
- JOURNAL OF CERAMIC PROCESSING RESEARCH, v.20, no.5, pp.484 - 489
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF CERAMIC PROCESSING RESEARCH
- Volume
- 20
- Number
- 5
- Start Page
- 484
- End Page
- 489
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/12478
- DOI
- 10.36410/jcpr.2019.20.5.484
- ISSN
- 1229-9162
- Abstract
- VO₂ is an attractive candidate as a transition metal oxide switching material as a selection device for reduction of sneak-path current. We demonstrate deposition of nanoscale VO₂ thin films via thermal atomic layer deposition (ALD) with H₂O reactant. Using this method, we demonstrate VO₂ thin films with high-quality characteristics, including crystallinity, reproducibility using X-ray diffraction, and X-ray photoelectron spectroscopy measurement. We also present a method that can increase uniformity and thin film quality by splitting the pulse cycle into two using scanning electron microscope measurement. We demonstrate an ON / OFF ratio of about 40, which is caused by metal insulator transition (MIT) of VO₂ thin film. ALD-deposited VO₂ films with high film uniformity can be applied to next-generation nonvolatile memory devices with high density due to their metal-insulator transition characteristic with high current density, fast switching speed, and high ON / OFF ratio.
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