Layered deposition of SnS₂ grown by atomic layer deposition and its transport properties
- Authors
- Lee, Namgue; Lee, Gunwoo; Choi, Hyeongsu; Park, Hyunwoo; Choi, Yeonsik; Seo, Hojun; Ju, HyoungBeen; Kim, Sunjin; Sul, Onejae; Lee, Jeongsu; Lee, Seung Beck; Jeon, Hyeong tag
- Issue Date
- Oct-2019
- Publisher
- IOP PUBLISHING LTD
- Keywords
- tin disulfide; post-transition metal dichalcogenides; two-dimensional materials; atomic layer deposition; field effect transistor
- Citation
- NANOTECHNOLOGY, v.30, no.40
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 30
- Number
- 40
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/12490
- DOI
- 10.1088/1361-6528/ab2d89
- ISSN
- 0957-4484
- Abstract
- In this work, we report on the layered deposition of few-layer tin disulfide (SnS₂) using atomic layer deposition (ALD). By varying the ALD cycles it was possible to deposit poly-crystalline SnS₂ with small variation in layer numbers. Based on the ALD technique, we developed the process technology growing few-layer crystalline SnS₂ film (3-6 layers) and we investigated their electrical properties by fabricating bottom-gated thin film transistors using the ALD SnS₂ as the transport channel. SnS₂ devices showed typical n-type characteristic with on/off current ratio of similar to 8.32 x 10(6), threshold voltage of similar to 2 V, and a subthreshold swing value of 830 mV decade(-1) for the 6 layers SnS₂. The developed SnS₂ ALD technique may aid the realization of two-dimensional SnS₂ based flexible and wearable devices.
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- 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
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