Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H₂/N₂ Plasmaopen accessRemote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H-2/N-2 Plasma
- Other Titles
- Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H-2/N-2 Plasma
- Authors
- Cho, Haewon; Lee, Namgue; Choi, Hyeongsu; Park, Hyunwoo; Jung, Chanwon; Song, Seokhwi; Yuk, Hyunwoo; Kim, Youngjoon; Kim, Jong-Woo; Kim, Keunsik; Choi, Youngtae; Park, Suhyeon; Kwon, Yurim; Jeon, Hyeongtag
- Issue Date
- Sep-2019
- Publisher
- MDPI
- Keywords
- atomic layer deposition; remote plasma; SiNx thin films
- Citation
- APPLIED SCIENCES-BASEL, v.9, no.17
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED SCIENCES-BASEL
- Volume
- 9
- Number
- 17
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/12575
- DOI
- 10.3390/app9173531
- ISSN
- 2076-3417
- Abstract
- Silicon nitride (SiNx) thin films using 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2) and N₂ plasma were investigated. The growth rate of SiNx thin films was saturated in the range of 200-500°C, yielding approximately 0.38 angstrom/cycle, and featuring a wide process window. The physical and chemical properties of the SiNx films were investigated as a function of deposition temperature. As temperature was increased, transmission electron microscopy (TEM) analysis confirmed that a conformal thin film was obtained. Also, we developed a three-step process in which the H₂ plasma step was introduced before the N₂ plasma step. In order to investigate the effect of H₂ plasma, we evaluated the growth rate, step coverage, and wet etch rate according to H₂ plasma exposure time (10-30 s). As a result, the side step coverage increased from 82% to 105% and the bottom step coverages increased from 90% to 110% in the narrow pattern. By increasing the H₂ plasma to 30 s, the wet etch rate was 32 angstrom/min, which is much lower than the case of only N₂plasma (43 angstrom/min).
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