Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Current status on the n/p type oxide semiconductor materials and the associated devices using atomic layer deposition
- Issue Date
- Dec-2021
- Publisher
- International Display Workshops
- Keywords
- Atomic Layer Deposition (ALD); N-type; Oxide Semiconductor; P-type; Thin Film Transistor (TFT)
- Citation
- Proceedings of the International Display Workshops, v.27, pp.137 - 140
- Indexed
- SCOPUS
- Journal Title
- Proceedings of the International Display Workshops
- Volume
- 27
- Start Page
- 137
- End Page
- 140
- ISSN
- 1883-2490
- Abstract
- Atomic Layer Deposition (ALD) has been introduced for oxide semiconductor synthesis and the device applications. Interestingly, ALD enable to deposit not only high-performance oxide semiconductor (a-IGZO etc.) but also p-type oxide semiconductors (CuO and SnO) at low deposition temperature. It will have a great potential to solve the current material and device issues. ALD will be the emerging thin film process in the coming display application.
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)