High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane
- Authors
- Hwang, Su Min; Kim, Harrison Sejoon; Le, Dan N.; Sahota, Akshay; Lee, Jaebeom; Jung, Yong Chan; Kim, Sang Woo; Kim, Si Joon; Choi, Rino; Ahn, Jinho; Hwang, Byung Keun; Zhou, Xiaobing; Kim, Jiyoung
- Issue Date
- Mar-2022
- Publisher
- AVS Science and Technology Society
- Citation
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, v.40, no.2, pp.1 - 8
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
- Volume
- 40
- Number
- 2
- Start Page
- 1
- End Page
- 8
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/139348
- DOI
- 10.1116/6.0001519
- ISSN
- 0734-2101
- Abstract
- A novel precursor, 1,1,1-tris(dimethylamino)disilane {TADS, [(H3C)2N]3Si2H3}, is used to deposit silicon dioxide (SiO2) films in a temperature range of 115-480 °C by thermal atomic layer deposition (tALD) and plasma-enhanced atomic layer deposition (PEALD) techniques. Compared to tris(dimethylamino)silane (TDMAS), the additional Si-Si bond in TADS is expected to enhance the reactivity of the molecule due to the polarization of the bond. In the tALD process, TADS gives a growth rate of 0.06 nm/cycle, which is approximately 20% higher than that of TDMAS, and an excellent conformality (>95% step coverage) in high aspect ratio nanotrenches (6:1). In the case of the PEALD process, TADS leads to not only a higher or at least comparable growth rates (0.11 nm/cycle), but also a higher bulk film density (∼2.38 g/cm3). As a result, the PEALD SiO2 films of TADS show a wet-etch rate down to 1.6 nm/min in 200:1 HF, which is comparable to that of the thermal oxide. Analyzed with Fourier-Transform Infrared (FTIR), the SiO2 films contain predominant Si−O bonds and a low level of Si−H and O−H bonds, consistent with the observed high wet-etch resistance. Furthermore, the PEALD SiO2 films deposited at 310 °C have at least 75% step coverage in high aspect ratio nanotrenches, suggesting that TADS is applicable for forming high-quality SiO2 films on both planar and patterned surfaces.
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