Recent progress and perspectives on atomic-layer-deposited semiconducting oxides for transistor applications
- Authors
- Cho, Min Hoe; Choi, Cheol Hee; Jeong, Jae Kyeong
- Issue Date
- Jan-2022
- Publisher
- WILEY
- Keywords
- AR; VR; atomic layer deposition; flat panel display; indium gallium zinc oxide; oxide semiconductor; thin-film transistor
- Citation
- JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, v.30, no.3, pp.175 - 197
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY
- Volume
- 30
- Number
- 3
- Start Page
- 175
- End Page
- 197
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/139826
- DOI
- 10.1002/jsid.1096
- ISSN
- 1071-0922
- Abstract
- This paper reviews recent developments in the fabrication of high-performance n-channel metal-oxide thin-film transistors (TFTs) through atomic-layer deposition (ALD), which are now attracting attention due to their potential for use in augmented and virtual reality, ultra-high-definition organic light-emitting diodes, and flexible electronics. Recent trends in research on TFT backplanes for display applications are provided in the introduction. In the main section, ALD-derived n-type oxides serving as active layers are classified into binary, ternary, and quaternary systems, and recent developments and critical issues in n-channel oxide TFTs are described. The performance of n-channel oxide TFTs can be boosted through advanced architectures, including stacked heterojunction channels using two-dimensional electron gases, and the introduction of high-k dielectric such as ALD-derived hafnium oxide, which is highlighted in this review. Finally, progress in p-channel ALD-derived oxide TFTs is briefly addressed with respect to complementary metal-oxide-semiconductor applications.
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