Sputter-grown GeTe/Sb2Te3 superlattice interfacial phase change memory for low power and multi-level-cell operationopen access
- Authors
- Jin, Soo-Min; Kang, Shin-Young; Kim, Hea-Jee; Lee, Ju-Young; Nam, In-Ho; Shim, Tae-Hun; Song, Yun-Heub; Park, Jea-Gun
- Issue Date
- Jan-2022
- Publisher
- WILEY
- Citation
- ELECTRONICS LETTERS, v.58, no.1, pp.38 - 40
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTRONICS LETTERS
- Volume
- 58
- Number
- 1
- Start Page
- 38
- End Page
- 40
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/139927
- DOI
- 10.1049/ell2.12337
- ISSN
- 0013-5194
- Abstract
- The multi-level feature of GeTe/Sb2Te3 interfacial phase change memory was achieved by applying a designed voltage-based pulse. It stably demonstrated five multi-level states without interference for 90 cycles by varying the pulse width. GeTe/Sb2Te3 interfacial phase change memory demonstrated retention time of > 1.0 x 10(3) s, presenting the significantly low drift coefficient (nu) of < 0.009, indicating no resistivity drift due to the structure relaxation of glass. In addition, the reset energy consumption of GeTe/Sb2Te3 interfacial phase change memory was reduced by more than 85% compared to conventional Ge2Sb2Te5 phase change memory at each bottom electrode contact size. Multi-level-cell operation mechanism and gradual increase in conductance value of GeTe/Sb2Te3 interfacial phase change memory was explained by a partial resistance transition model where phase transition occurred partially in all layers. The result of the GeTe/Sb2Te3 interfacial phase change memory performance is expected to bring great advantages to the next-generation storage class memory industry that requires low energy and high density.
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