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IGZO 반도체 및 구리 전극의 deep-UV/IPL 광어닐링 공정을 통한 TFT 특성 연구Study on all intense pulsed light (IPL) annealed thin film transistor (TFT) using IGZO semiconductor and Cu source drain via UV-assisted flash light irradiation
- Other Titles
- Study on all intense pulsed light (IPL) annealed thin film transistor (TFT) using IGZO semiconductor and Cu source drain via UV-assisted flash light irradiation
- Issue Date
- Apr-2019
- Publisher
- 대한기계학회
- Citation
- 대한기계학회 재료 및 파괴부문 2019년도 춘계학술대회 논문집, pp.43 - 44
- Indexed
- OTHER
- Journal Title
- 대한기계학회 재료 및 파괴부문 2019년도 춘계학술대회 논문집
- Start Page
- 43
- End Page
- 44
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Collections - 서울 공과대학 > 서울 기계공학부 > 1. Journal Articles
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Related Researcher
- Kim, Hak Sung
- COLLEGE OF ENGINEERING (SCHOOL OF MECHANICAL ENGINEERING)