Enhanced structural and electrical features of amorphous InGaZnO thin film transistors via a heavy Kr gas process
- Authors
- Kim, Tae Yoon; Kang, Tae Sung; Hong, Jin Pyo
- Issue Date
- Aug-2015
- Publisher
- ELSEVIER
- Keywords
- Oxide TFT; IGZO; Kr gas; Oxygen vacancy
- Citation
- CURRENT APPLIED PHYSICS, v.15, no.8, pp.910 - 914
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- CURRENT APPLIED PHYSICS
- Volume
- 15
- Number
- 8
- Start Page
- 910
- End Page
- 914
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/142937
- DOI
- 10.1016/j.cap.2015.04.004
- ISSN
- 1567-1739
- Abstract
- We report the influence of a heavy Kr gas sputtering process on the electrical and structural features of amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFFs). Electrical observation revealed effective reduction of threshold voltage shifts by adapting a simple sputtering process with Kr gas during growth of a-IGZO TFTs. In addition, the application of Kr-gas resulted in a reduction of oxygen vacancies associated with defect sites in the a-IGZO active channel layer. Structural analyses including atomic force microscopy, X-ray reflectivity, Auger electron spectroscopy, and X-ray photoelectron spectroscopy depth profiling were carried out, along with electrical bias stability tests that convincingly confirm progress of heavy Kr gas process-induced features.
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