Real-time dielectric-film thickness measurement system for plasma processing chamber wall monitoring

Abstract

An in-situ real-time processing chamber wall monitoring system was developed. In order to measure the thickness of the dielectric film, two frequencies of small sinusoidal voltage (similar to 1 V) signals were applied to an electrically floated planar type probe, which is positioned at chamber wall surface, and the amplitudes of the currents and the phase differences between the voltage and current were measured. By using an equivalent sheath circuit model including a sheath capacitance, the dielectric thickness can be obtained. Experiments were performed in various plasma condition, and reliable dielectric film thickness was obtained regardless of the plasma properties. In addition, availability in commercial chamber for plasma enhanced chemical vapor deposition was verified. This study is expected to contribute to the control of etching and deposition processes and optimization of periodic maintenance in semiconductor manufacturing process.