Highly stable perpendicular magnetic anisotropies of CoFeB/MgO frames employing W buffer and capping layers
- Authors
- An, Gwang Guk; Lee, Ja Bin; Yang, Seung Mo; Kim, Jae Hong; Chung, Woo Seong; Hong, Jin Pyo
- Issue Date
- Apr-2015
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Perpendicular magnetic anisotropy (PMA); Interface anisotropy; CoFeB/MgO; Annealing stability; B diffusion
- Citation
- ACTA MATERIALIA, v.87, pp.259 - 265
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACTA MATERIALIA
- Volume
- 87
- Start Page
- 259
- End Page
- 265
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/143215
- DOI
- 10.1016/j.actamat.2015.01.022
- ISSN
- 1359-6454
- Abstract
- Typical CoFeB/MgO frames ensuring interface perpendicular magnetic anisotropy (PMA) features are one of the most reliable building blocks to meet the demand of PMA-based memory devices. However, employing the CoFeB/MgO frame with a Ta buffer layer has been restricted by the rapid PMA degradation that occurs during annealing at temperatures greater than 300 degrees C and the need of an ultrathin CoFeB layer of approximately 1.3 nm. Thus, the ability to enhance thermally strong PMA characteristics is still a key step toward extending their use. Here, we examine the effect of W layers on PMA features through both W buffer/CoFeB/MgO and MgO/CeFeB/W capping frames at various annealing temperatures. Highly stable PMA was achieved up to 450 degrees C at a specific W thickness, along with the presence of the dominant PMA properties at a relatively thick CoFeB greater than 1.3 nm and the achievement of a high K-eff of approximately 5 Merg/cc.
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