Paper no P35: Improved stability of solution-processed ZnO thin-film transistor post-treated by ultraviolet annealing step
- Authors
- Kang, Taesung; Koo, Jayhyun; Kim, Taeyoon; Hong, Jinpyo
- Issue Date
- Nov-2013
- Publisher
- Blackwell Publishing Ltd
- Citation
- Digest of Technical Papers - SID International Symposium, v.44, pp.119 - 122
- Indexed
- SCOPUS
- Journal Title
- Digest of Technical Papers - SID International Symposium
- Volume
- 44
- Start Page
- 119
- End Page
- 122
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/143654
- DOI
- 10.1002/sdtp.4
- ISSN
- 0097-966X
- Abstract
- We present electrical and structural features of solution- processed ZnO thin-film transistors (TFTs) grown via a chemical solution process post-treated by ultra violet (UV) annealing step at processing temperature below 250° C. The transfer curves for the UV annealed ZnO TFTs, including around two-order higher on-current magnitude reveals only a negative drift of -0.66 V in time for 15 days, compared with a -9.29 V negative drift of the conventionally thermally annealed ZnO TFTs at 300°C. The observation of X-ray photoelectron spectroscopy clearly demonstrates the significant reduction of non-lattice oxygen vacancies via proper UV annealing step. The nature of improved stability in the UV-annealed ZnO TFTs is also described.
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