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Driving Force of Phase Transition in Indium Nanowires on Si(111)open access

Authors
Kim, Hyun-JungCho, Jun-Hyung
Issue Date
Mar-2013
Publisher
AMER PHYSICAL SOC
Citation
PHYSICAL REVIEW LETTERS, v.110, no.11, pp.1 - 5
Indexed
SCIE
SCOPUS
Journal Title
PHYSICAL REVIEW LETTERS
Volume
110
Number
11
Start Page
1
End Page
5
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/143757
DOI
10.1103/PhysRevLett.110.116801
ISSN
0031-9007
Abstract
The precise driving force of the phase transition in indium nanowires on Si(111) has been controversial whether it is driven by a Peierls instability or by a simple energy lowering due to a periodic lattice distortion. The present van der Waals (vdW) corrected hybrid density functional calculation predicts that the low-temperature 8 x 2 structure whose building blocks are indium hexagons is energetically favored over the room-temperature 4 x 1 structure. We show that the correction of self-interaction error and the inclusion of vdW interactions play crucial roles in describing the covalent bonding, band-gap opening, and energetics of hexagon structures. The results manifest that the formation of hexagons occurs by a simple energy lowering due to the lattice distortion, not by a charge density wave formation arising from Fermi surface nesting.
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