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Enhanced Plasma Uniformity in RF Plasma With Side Multihole
- Authors
- Lee, Hyo-Chang; Chung, Chin-Wook
- Issue Date
- Oct-2014
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Capacitively coupled plasma (CCP); hollow cathode; plasma uniformity; radio-frequency (RF) gas discharge
- Citation
- IEEE TRANSACTIONS ON PLASMA SCIENCE, v.42, no.10, pp.2766 - 2767
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON PLASMA SCIENCE
- Volume
- 42
- Number
- 10
- Start Page
- 2766
- End Page
- 2767
- ISSN
- 0093-3813
- Abstract
- Capacitively coupled plasma source with side multihole is studied. Due to the hollow cathode effect at the multihole, edge plasma density is strongly increased and thus, plasma uniformity is significantly enhanced.
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Related Researcher
- Chung, Chin Wook
- COLLEGE OF ENGINEERING (MAJOR IN ELECTRICAL ENGINEERING)