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Improvement in carrier mobility of ZnON transistor by tantalum encapsulation
- Issue Date
- Nov-2019
- Publisher
- International Display Workshops
- Keywords
- Encapsulation; Scavenging effect; Tantalum oxide; Thin-film Transistors; Zinc oxynitride
- Citation
- Proceedings of the International Display Workshops, v.2, pp.508 - 511
- Indexed
- SCOPUS
- Journal Title
- Proceedings of the International Display Workshops
- Volume
- 2
- Start Page
- 508
- End Page
- 511
- ISSN
- 1883-2490
- Abstract
- The TaOx/ZnON thin-film stack showed a more uniform distribution of nanocrystalline ZnON with an increased stoichiometric anion lattice compared to control ZnON thin-films. Significantly, improved mobility of 89.4 cm2/Vs were achieved for TaOx/ZnON TFTs. This improvement can be explained by the removal and passivation effect of TaOx film on ZnON..
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Related Researcher
- Jeong, Jae Kyeong
- COLLEGE OF ENGINEERING (SCHOOL OF ELECTRONIC ENGINEERING)