Threshold switching-based bidirectional nonlinear characteristics of ZnTe selectors for 3D stackable crossbar array applications
- Authors
- Jang, Gabriel; Kim, Tae Yoon; Hyun, Da Seul; Beak, Gwang Ho; Park, Jae Gun; Hong, Jin Pyo
- Issue Date
- Sep-2018
- Publisher
- 일본 물리학회
- Citation
- 50th anniversary of international conference on solid state devices and materials, pp.101 - 102
- Indexed
- OTHER
- Journal Title
- 50th anniversary of international conference on solid state devices and materials
- Start Page
- 101
- End Page
- 102
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/149317
- DOI
- 10.7567/SSDM.2018.B-2-02
- Abstract
- Three dimensional (3D) stackable memory devices including crossbar array frames have emerged as a promising candidate for the realization of high-density non-volatile memory electronics. However, the crossbar array using two terminal element is highly susceptible to sneak path issues that arise from unintended leakage current since each cell in a row and column is connected to each other. Thus, the integration of a suitable selector as a two way switches is crucially required. Here, we address electrical features of ZnTebased selector, ensuring high bidirectional non-linearity of more than 10⁴ . Typical threshold switching (TS) after forming process was clearly observed, along with attaining the exponential increase in the Off-current with increasing voltages. We propose the possible conduction nature in the Off-current by utilizing a modified Poole-Frankel (PF) model. The observed threshold voltages of the selector exhibited a thickness dependency, thereby implying an adjustable nature in the device.
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