Effect of N Concentration Upon Resistive Switching Behavior of Au/Ni/TaON/NiSi ECM Devices
- Authors
- Park, Jingyu; Jeon, Heeyoung; Jang, Woochool; Kim, Hyunjung; Kim, Hongki; Jeon, Hyeongtag
- Issue Date
- Dec-2018
- Publisher
- WILEY-V C H VERLAG GMBH
- Keywords
- conductive filaments; electrochemical metallization memory; Ni; TaOn
- Citation
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, v.215, no.23
- Indexed
- SCIE
SCOPUS
- Journal Title
- PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Volume
- 215
- Number
- 23
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/15261
- DOI
- 10.1002/pssa.201800181
- ISSN
- 1862-6300
- Abstract
- IIn this study, Au/Ni/TaOx/NiSi and Au/Ni/TaON/NiSi electrochemical metallization memory devices are fabricated and their resistive switching (RS) behavior is investigated. The composition of TaON is controlled by changing the N partial pressure during sputtering. The Au/Ni/TaOx/NiSi device does not function as a memory device, whereas the Au/Ni/TaON/NiSi devices show conventional ECM characteristics. In addition, the device with the highest N concentration among those fabricate exhibites the best RS characteristics, with a constant high-resistance-state (HRS) current level and stable retention properties over 5 x 10(4) s, due to the formation of strong Ni conductive filaments (CFs). The TaON film with the highest N concentration has the lowest defect density, allowing stable Ni CFs to form and thereby yielding superior device performance.
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