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High-Performance Amorphous InGaZnO Thin-Film Transistors via Staked Ultrathin High-k TaOx Buffer Layer Grown on Low-k SiO2 Gate Oxide
- Authors
- Kang, Tae Sung; Yoon, Kap Soo; Baek, Gwang Ho; Ko, Won Bae; Yang, Seung Mo; Yeon, Bum Mo; Hong, Jin Pyo
- Issue Date
- 2017
- Publisher
- WILEY
- Keywords
- IGZO TFTs; tantalum oxide; thermalization energy; thin film transistors
- Citation
- ADVANCED ELECTRONIC MATERIALS, v.3, no.3, pp.1 - 8
- Indexed
- SCIE
SCOPUS
- Journal Title
- ADVANCED ELECTRONIC MATERIALS
- Volume
- 3
- Number
- 3
- Start Page
- 1
- End Page
- 8
- ISSN
- 2199-160X
- Abstract
- Efficient reduction of interfacial defect states is achieved by using an intentionally controlled ultrathin TaOx buffer layer. This process allows for the fabrication of IGZO thin-film transistors (TFTs) with highly enhanced performance. These results may open a new avenue for the development of high-performance oxide-based TFTs.
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Related Researcher
- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)