Comparative studies on the physical and electronic properties of reactively sputtered ZnO and ZnON semiconductors
- Authors
- Ok, Kyung-Chul; Jeong, Hyun-Jun; Lee, Hyun-Mo; Park, Jozeph; Park, Jin-Seong
- Issue Date
- Dec-2015
- Publisher
- ELSEVIER SCI LTD
- Keywords
- ZnO; ZnON; Oxide semiconductor; X-ray absorption; Thin film transistor
- Citation
- CERAMICS INTERNATIONAL, v.41, no.10, pp.13281 - 13284
- Indexed
- SCIE
SCOPUS
- Journal Title
- CERAMICS INTERNATIONAL
- Volume
- 41
- Number
- 10
- Start Page
- 13281
- End Page
- 13284
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/155699
- DOI
- 10.1016/j.ceramint.2015.07.110
- ISSN
- 0272-8842
- Abstract
- Thin film transistors were fabricated using ZnO and ZnON semiconductors grown by DC reactive sputtering. After low vacuum annealing at 250 degrees C, ZnON devices exhibit superior electrical performance (mu(sat)=56.3 cm(2)/Vs, Vth = -1.59 V, and SS =0.51 V/dec) in comparison with ZnO devices (mu(sat)= 0.99 cm2/Vs, Vth=3.28 V, and SS =1.22 V/dec). The physical and electronic structures in both materials were analyzed by X-ray diffraction and X-ray absorption spectroscopy, respectively. The chemical bonding states were also examined by X-ray photoelectron spectroscopy. Consequently, nitrogen incorporation in DC reactive sputtering is found to suppress crystallization and enhance electron transport by the formation of Zn-N bonds.
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