Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
The impact of thermal-assist UV/Ozone treatment in amorphous zinc oxynitride thin film transistors
- Issue Date
- Dec-2015
- Publisher
- International Display Workshops
- Keywords
- Instability; Low temperature; Oxynitride; Thin film transistors; UVO
- Citation
- Proceedings of the International Display Workshops, v.2, pp.660 - 661
- Indexed
- SCOPUS
- Journal Title
- Proceedings of the International Display Workshops
- Volume
- 2
- Start Page
- 660
- End Page
- 661
- ISSN
- 1883-2490
- Abstract
- We fabricated high mobility (μsat > 40cm2A/s) and stable (ΔVm < ± 1V @PBS and NBS for 1hr) amorphous zinc oxynitride thin film transistors (a-ZnON TFTs) using thenrial assist UV/ozone treatment. The electrical characteristics of a-ZnON TFTs were investigated by chemical bonding properties.
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Park, Jinseong
- COLLEGE OF ENGINEERING (SCHOOL OF MATERIALS SCIENCE AND ENGINEERING)